RF Power Field-Effect Transistors Discontinued

BLF248,112

Manufacturer: NXP

RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: VHF PUSH-PULL POWER MOS TRANSISTOR
Part Number: BLF248,112
Generic: BLF248
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 1992
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
Type Part Number Manufacturer
Manufacturer Suggested BLF184XRU NXP
Functional Equivalent BLF248 ASI
Functional Equivalent BLF368 ASI
Functional Equivalent MRF141G M/A-com Tech
Functional Equivalent MRF141G ASI
Functional Equivalent MRF175GV M/A-com Tech
Functional Equivalent MRF175GV ASI
Functional Equivalent VFT300-28 ASI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Risk Indicators
  • Lifecycle: High

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details