RF Power Field-Effect Transistors Active Mature

BLF248

Manufacturer: ASI

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL ENHANCEMENT MODE VHF POWER MOSFET
Part Number: BLF248
Generic: BLF248
CAGE Code: 4U751, 6LHN9
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 1999
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
Type Part Number Manufacturer
Functional Equivalent BLF368 ASI
Functional Equivalent MRF141G M/A-com Tech
Functional Equivalent MRF141G ASI
Functional Equivalent MRF175GV M/A-com Tech
Functional Equivalent MRF175GV ASI
Active Manufacturers NJ Semi 2D085
Functional Equivalent VFT300-28 ASI
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Supply Chain: Low-Med

Need help? Email sales or call (800) 701-8152.

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details