RF Power Field-Effect Transistors
Discontinued
A2G22S251-01SR3
Manufacturer: NXP
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
Manufacturer Description:
RF POWER GAN TRANSISTOR
| Part Number: | A2G22S251-01SR3 |
|---|---|
| Generic: | A2G22S251 |
| CAGE Code: | H1R01, H0H68, H1V34 |
| Category: | RF Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | May 2016 |
|---|---|
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | FLATPACK |
|---|---|
| Terminals: | 2 |
| Operating Temperature: | -55.0°C to 225.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
Pricing & Availability
5286 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: High
- Environmental: Low
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