RF Power Field-Effect Transistors Transferred Discontinued-Transferred

NE5520279A-T1-A

Manufacturer: NEC Semi

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.8 GHZ 1.6 W TRANSMISSION AMPLIFIERS
Part Number: NE5520279A-T1-A
Generic: NE5520279
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2002
Lifecycle Stage: Discontinued-Transferred
Package Information
Package Style: MICROWAVE
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
Type Part Number Manufacturer
Functional Equivalent S9G07A Toshiba
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Med

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