RF Power Field-Effect Transistors Discontinued

NE6510179A-A

Manufacturer: NEC

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Hetero-junction FET

Manufacturer Description: 1 W L-BAND POWER GAAS HJ-FET
Part Number: NE6510179A-A
Generic: NE6510179
CAGE Code: U4794, 33297, 4T165
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 1999
Lifecycle Stage: N/A
Package Information
Package Style: MICROWAVE
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
Type Part Number Manufacturer
Functional Equivalent S9G07A Toshiba
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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