MRF175GV
Manufacturer: M/A-com Tech
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
| Part Number: | MRF175GV |
|---|---|
| Generic: | MRF175 |
| CAGE Code: | 55NN2, 50998 |
| NSN: | 5961-01-531-2790 |
| Category: | RF Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | March 1991 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 4 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Active Manufacturers |
ASI
|
4U751 |
| Functional Equivalent |
BLF248
|
ASI |
| Functional Equivalent |
BLF368
|
ASI |
| Functional Equivalent |
MRF141G
|
M/A-com Tech |
| Functional Equivalent |
MRF141G
|
ASI |
| FFF Alternates |
MRF175GV
|
ASI |
| Functional Equivalent |
MRF175GV
|
ASI |
| Active Manufacturers |
NJ Semi
|
2D085 |
| Functional Equivalent |
VFT300-28
|
ASI |
Pricing & Availability
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med-High
Related Products
2SK3075
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Toshiba
2SK3079A
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Toshiba
A2G22S251-01SR3
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
NXP