RF Power Field-Effect Transistors Active Mature

MRF150

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: RF POWER FIELD-EFFECT TRANSISTOR
Part Number: MRF150
Generic: MRF150
CAGE Code: 55NN2, 50998
NSN: 5961-01-648-8293
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 1994
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Active Manufacturers ASI 4U751
FFF Alternates HFT150-50 ASI
Functional Equivalent HFT150-50 ASI
FFF Alternates MRF150 ASI
Functional Equivalent MRF150 ASI
Functional Equivalent MRF151 M/A-com Tech
Functional Equivalent MRF151A M/A-com Tech
Functional Equivalent SD2931-10 ST Micro
Functional Equivalent VFT150-50 ASI
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details