RF Power Field-Effect Transistors Active Mature

MRF141G

Manufacturer: M/A-com Tech

RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: RF POWER FET
Part Number: MRF141G
Generic: MRF141
CAGE Code: 55NN2, 50998
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 2001
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Active Manufacturers ASI 4U751
Functional Equivalent BLF248 ASI
Functional Equivalent BLF368 ASI
FFF Alternates MRF141G ASI
Functional Equivalent MRF141G ASI
Functional Equivalent MRF175GV M/A-com Tech
Functional Equivalent MRF175GV ASI
Active Manufacturers NJ Semi 2D085
Functional Equivalent VFT300-28 ASI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details