Power Field-Effect Transistors Active Mature

IPP200N25N3G

Manufacturer: Infineon

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: IPP200N25N3G
Generic: IPP200N25
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2009
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent FDA59N25 Onsemi
Functional Equivalent IPB200N25N3G Infineon
Functional Equivalent IPB200N25N3GATMA1 Infineon
Functional Equivalent IPB64N25S3-20 Infineon
Functional Equivalent IPB64N25S320ATMA1 Infineon
FFF Alternates IPP200N25N3GXKSA1 Infineon
Functional Equivalent IPP200N25N3GXKSA1 Infineon
Functional Equivalent IXTQ64N25P Littelfuse
Functional Equivalent IXTT64N25P Littelfuse
Functional Equivalent SP000677896 Infineon
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Med-High

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