Power Field-Effect Transistors Active Mature

IPB200N25N3G

Manufacturer: Infineon

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: IPB200N25N3G
Generic: IPB200N25
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2009
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent FDA59N25 Onsemi
FFF Alternates IPB200N25N3GATMA1 Infineon
Functional Equivalent IPB200N25N3GATMA1 Infineon
FFF Alternates IPB64N25S3-20 Infineon
Functional Equivalent IPB64N25S3-20 Infineon
FFF Alternates IPB64N25S320ATMA1 Infineon
Functional Equivalent IPB64N25S320ATMA1 Infineon
Functional Equivalent IPP200N25N3G Infineon
Functional Equivalent IPP200N25N3GXKSA1 Infineon
Functional Equivalent IXTQ64N25P Littelfuse
Functional Equivalent IXTT64N25P Littelfuse
FFF Alternates SP000677896 Infineon
Functional Equivalent SP000677896 Infineon
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip