Power Field-Effect Transistors Active Decline

IPB64N25S3-20

Manufacturer: Infineon

Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: OPTIMOS-T POWER-TRANSISTOR
Part Number: IPB64N25S3-20
Generic: IPB64N25
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: October 2012
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent FDA59N25 Onsemi
FFF Alternates IPB200N25N3G Infineon
Functional Equivalent IPB200N25N3G Infineon
FFF Alternates IPB200N25N3GATMA1 Infineon
Functional Equivalent IPB200N25N3GATMA1 Infineon
FFF Alternates IPB64N25S320ATMA1 Infineon
Functional Equivalent IPB64N25S320ATMA1 Infineon
Functional Equivalent IPP200N25N3G Infineon
Functional Equivalent IPP200N25N3GXKSA1 Infineon
Functional Equivalent IXTQ64N25P Littelfuse
Functional Equivalent IXTT64N25P Littelfuse
FFF Alternates SP000677896 Infineon
Functional Equivalent SP000677896 Infineon
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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