Power Field-Effect Transistors NRFND Decline

BSC028N06NSTATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS POWER-TRANSISTOR
Part Number: BSC028N06NSTATMA1
Generic: BSC028N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2013
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSB028N06NN3G Infineon
Functional Equivalent BSC027N06LS5ATMA1 Infineon
Functional Equivalent BSC028N06NS Infineon
Functional Equivalent BSC028N06NSATMA1 Infineon
Functional Equivalent DMT6004LPS-13 Diodes
Functional Equivalent IPB026N06N Infineon
Functional Equivalent IPB026N06NATMA1 Infineon
Pricing & Availability
34678 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

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