Power Field-Effect Transistors
Active
Mature
BSC028N06NS
Manufacturer: Infineon
Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
MOSFET OptiMOS Power Transistor 60 V
| Part Number: | BSC028N06NS |
|---|---|
| Generic: | BSC028N06 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | December 2011 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 5 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
AON6260
|
Alpha Omega |
| Functional Equivalent |
BSB028N06NN3G
|
Infineon |
| Functional Equivalent |
BSC027N06LS5ATMA1
|
Infineon |
| Functional Equivalent |
BSC028N06NSATMA1
|
Infineon |
| Functional Equivalent |
DMT6004LPS-13
|
Diodes |
| Functional Equivalent |
IPB026N06N
|
Infineon |
| Functional Equivalent |
IPB026N06NATMA1
|
Infineon |
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med
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