Power Field-Effect Transistors Active Mature

BSB028N06NN3G

Manufacturer: Infineon

Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS N-CHANNEL POWER-MOSFET
Part Number: BSB028N06NN3G
Generic: BSB028N06
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: March 2011
Lifecycle Stage: Mature
Package Information
Package Style: CHIP CARRIER
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSC027N06LS5ATMA1 Infineon
Functional Equivalent BSC028N06NS Infineon
Functional Equivalent BSC028N06NSATMA1 Infineon
Functional Equivalent DMT6004LPS-13 Diodes
Functional Equivalent IPB026N06N Infineon
Functional Equivalent IPB026N06NATMA1 Infineon
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Med

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