Power Field-Effect Transistors

Browse our selection of power field-effect transistors products

Showing 6676-6700 of 6912 products
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 60A I(D), 60V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 90A I(D), 40V, 0.006ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 57A I(D), 650V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Toshiba
Power Field-Effect Transistor, 9A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor
Toshiba
Power Field-Effect Transistor, 11.5A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 15A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 15.8A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Toshiba
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 30.8A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Toshiba
Power Field-Effect Transistor, 30.8A I(D), 600V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 33A I(D), 100V, 0.0162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor
Toshiba
Power Field-Effect Transistor, 40A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Toshiba
Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 60A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 6A I(D), 650V, 1.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor
Toshiba
Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor
Toshiba
Power Field-Effect Transistor, 7.5A I(D), 250V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 8A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET