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Power Field-Effect Transistors

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Showing 6651-6675 of 6912 products
SUP90N10-8M8P-E3
Vishay
Power Field-Effect Transistor, 90A I(D), 100V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
T1G6000528-Q3
Triquint
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
T1G6001528-Q3
Triquint
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
T2G6000528-Q3
Qorvo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET
TB100
Ween
Power Field-Effect Transistor
TC1550TG-G
Microchip
Power Field-Effect Transistor, 350A I(D), 500V, 60ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
TC6320K6-G
Microchip
Power Field-Effect Transistor, 200V, 7ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
TC6320TG-G
Microchip
Power Field-Effect Transistor, 200V, 7ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
TD9944TG-G
Microchip
Power Field-Effect Transistor, 240V, 6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
TGF2977-SM
Qorvo
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Nitride, N-Channel, High Electron Mobility FET
TGF2978-SM
Qorvo
RF Power Field-Effect Transistor
TGF2979-SM
Qorvo
RF Power Field-Effect Transistor
TIM1213-10L
Toshiba
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
TIM1213-15L
Toshiba
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
TIM1213-8ULA
Toshiba
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
TIM3742-45SL-341
Toshiba
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
TIM4450-25UL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
TIM4450-4UL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
TIM4450-60SL
Toshiba
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
TIM5359-16UL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
TIM5359-45SL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
TIM5359-60SL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
TIM5359-8UL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
TIM5964-12UL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
TIM5964-60SL
Toshiba
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET