RF Power Field-Effect Transistors Discontinued Discontinued Discontinued

PTF10007

Manufacturer: Wolfspeed

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: GOLDMOS FIELD EFFECT TRANSISTOR 35 WATTS, 1.0 GHZ
Part Number: PTF10007
Generic: PTF10007
CAGE Code: 0C9J8
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 1997
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Request Quote Back to Catalog
Risk Indicators
  • Lifecycle: High

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details