Power Field-Effect Transistors NRFND Decline

SQD50P04-13L_GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 50A I(D), 40V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: AUTOMOTIVE P-CHANNEL 40 V (D-S) 175 DEGREE CELSIUS MOSFET
Part Number: SQD50P04-13L_GE3
Generic: SQD50P0413
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 2009
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent SQD19P06-60L_GE3 Vishay
Functional Equivalent SQD50P06-15L_GE3 Vishay
Pricing & Availability
141077 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip