SIR878BDP-T1-RE3
Manufacturer: Vishay
Power Field-Effect Transistor, 42.5A I(D), 100V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | SIR878BDP-T1-RE3 |
|---|---|
| Generic: | SIR878 |
| CAGE Code: | 18612, 0LCA7, K4184, C2817, 09969 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | November 2017 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 5 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
TPH1400ANH
|
Toshiba |
| Functional Equivalent |
TPH1400ANH
|
L1Q(M |
| Functional Equivalent |
TPH1400ANH(TE12L
|
Q) |
| Functional Equivalent |
TPH1400ANH(TE12L)
|
Toshiba |
| Functional Equivalent |
TPH1400ANH(TE12L1
|
Q) |
| Functional Equivalent |
TPH1400ANH(TE12L1)
|
Toshiba |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic