Power Field-Effect Transistors NRFND Decline

SIR622DP-T1-GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 51.6A I(D), 150V, 0.0177ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL 150 V (D-S) MOSFET
Part Number: SIR622DP-T1-GE3
Generic: SIR622
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: July 2016
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 5
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates BSC160N15NS5 Infineon
Functional Equivalent BSC160N15NS5 Infineon
FFF Alternates BSC160N15NS5ATMA1 Infineon
Functional Equivalent BSC160N15NS5ATMA1 Infineon
FFF Alternates BSC190N15NS3G Infineon
Functional Equivalent BSC190N15NS3G Infineon
FFF Alternates BSC190N15NS3GATMA1 Infineon
Functional Equivalent BSC190N15NS3GATMA1 Infineon
Functional Equivalent SIDR622DP-T1-GE3 Vishay
Pricing & Availability
40997 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

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