Power Field-Effect Transistors NRFND Decline

SI3493BDV-T1-GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 8A I(D), 20V, 0.0275ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA

Manufacturer Description: P-CHANNEL 20-V (D-S) MOSFET
Part Number: SI3493BDV-T1-GE3
Generic: SI3493
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: March 2007
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 6
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies SI3493BDV-T1-GE3, sourced from VISHAY SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 9011 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
Functional Equivalent FDC602P Onsemi
Functional Equivalent FDC604P Onsemi
Functional Equivalent FDC638P Onsemi
Functional Equivalent FDC640P Onsemi
Functional Equivalent PMN48XP 115
Functional Equivalent PMN48XP Nexperia
Functional Equivalent PMN48XP 125
Manufacturer Suggested SI3493BDV-T1-BE3 Vishay
Pricing & Availability
9011 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic