RF Power Field-Effect Transistors Active Mature

D2229UK

Manufacturer: TT Electronics

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: GOLD METALLISED MULTI-PURPOSE SILICON 2.5W-12.5V-1GHZ SINGLE ENDED DMOS RF FET
Part Number: D2229UK
Generic: D2229
CAGE Code: 57027, F7178, U1395, 73138, K0718
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 1998
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates D2229UKG4 TT Electronics
Functional Equivalent D2229UKG4 TT Electronics
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details