RF Power Field-Effect Transistors Discontinued

TNM2600-7

Manufacturer: Toshiba

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: HIGH POWER GAAS FET (L, S-BAND)
Part Number: TNM2600-7
Generic: TNM2600
CAGE Code: 61802
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 1993
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: High

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