Insulated Gate Bipolar Transistors Discontinued

MG300J2YS50

Manufacturer: Toshiba

Insulated Gate Bipolar Transistor, 300A I(C), 600V V(BR)CES, N-Channel

Manufacturer Description: SILICON N CHANNEL GTR MODULE IGBT
Part Number: MG300J2YS50
Generic: MG300J2YS50
CAGE Code: 61802
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 1993
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 7

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent APTGT300A60G Microchip
Functional Equivalent APTGT300A60TG Microchip
Functional Equivalent APTGT600SK60G Microchip
Functional Equivalent CM300DY-13T Mitsubishi
Functional Equivalent CM300DY-24T Mitsubishi
Functional Equivalent FF300R07KE4 Infineon
Functional Equivalent FF300R07KE4HOSA1 Infineon
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: High

Need help? Email sales or call (800) 701-8152.

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec