RF Power Field-Effect Transistors EOL Phase-Out

2SK3075

Manufacturer: Toshiba

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Part Number: 2SK3075
Generic: 2SK3075
CAGE Code: 61802
NSN: 5961-01-521-7121
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 1998
Lifecycle Stage: Phase-Out
Package Information
Package Style: MICROWAVE
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: High

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