Power Field-Effect Transistors Active Mature

CSD25485F5

Manufacturer: TI

Power Field-Effect Transistor, -5.3A I(D), 20V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: -20-V P-CHANNEL FEMTOFET MOSFET
Part Number: CSD25485F5
Generic: CSD25485F5
CAGE Code: 01295, 33809
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: August 2016
Lifecycle Stage: Mature

Package Information
Package Style: CHIP CARRIER
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Pricing & Availability
56054 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip