Power Field-Effect Transistors Active Mature

CSD19536KTT

Manufacturer: TI

Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: 100-V N-CHANNEL NEXFET POWER MOSFET
Part Number: CSD19536KTT
Generic: CSD19536
CAGE Code: 01295, 33809
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: March 2015
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates CSD19536KTTT TI
Functional Equivalent CSD19536KTTT TI
Functional Equivalent IRLB4030PBF Infineon
FFF Alternates IRLS4030TRRPBF Infineon
Functional Equivalent IRLS4030TRRPBF Infineon
Pricing & Availability
12102 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

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