CSD13306W
Manufacturer: TI
Power Field-Effect Transistor, 3.5A I(D), 12V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | CSD13306W |
|---|---|
| Generic: | CSD13306 |
| CAGE Code: | 01295, 33809 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | March 2015 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | GRID ARRAY |
|---|---|
| Terminals: | 6 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- PFAS: NO
- DRC Status: DRC Conflict Free
Abacus Technologies supplies CSD13306W, sourced from TEXAS INSTRUMENTS. Inventory shown on this page reflects quantity on hand when available: 3377 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something
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Risk Indicators
- Lifecycle: Low
- Environmental: Low
- Supply Chain: Low
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