CSD19537Q3
Manufacturer: TI
Power Field-Effect Transistor, 53A I(D), 100V, 0.0166ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | CSD19537Q3 |
|---|---|
| Generic: | CSD19537Q3 |
| CAGE Code: | 01295, 33809 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | September 2015 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies CSD19537Q3, sourced from TEXAS INSTRUMENTS. Inventory shown on this page reflects quantity on hand when available: 4234 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something
| Type | Part Number | Manufacturer |
|---|---|---|
| FFF Alternates |
CSD19537Q3T
|
TI |
| Functional Equivalent |
CSD19537Q3T
|
TI |
| Functional Equivalent |
IRFH5210TRPBF
|
Infineon |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low
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