RF Power Field-Effect Transistors Discontinued

FLC257MH-6

Manufacturer: Sumitomo

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

Manufacturer Description: C-BAND POWER GAAS FET
Part Number: FLC257MH-6
Generic: FLC257
CAGE Code: S0508, 04PC1
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 2000
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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