RF Power Field-Effect Transistors Discontinued

FLC087XP

Manufacturer: Sumitomo

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, P-Channel, High Electron Mobility FET

Manufacturer Description: GAAS FET AND HEMT CHIP
Part Number: FLC087XP
Generic: FLC087
CAGE Code: S0508, 04PC1
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 2004
Lifecycle Stage: Discontinued
Package Information
Package Style: UNCASED CHIP
Terminals: 3
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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