Power Field-Effect Transistors Active Mature

STF24N60M2

Manufacturer: ST Micro

Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: N-CHANNEL 600 V, 168 MILLIOHM TYP., 18 A M2 POWER MOSFET
Part Number: STF24N60M2
Generic: STF24N60
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2013
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies STF24N60M2, sourced from ST MICROELECTRONICS. Inventory shown on this page reflects quantity on hand when available: 20096 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
FFF Alternates STF24NM60N ST Micro
Functional Equivalent STF24NM60N ST Micro
Functional Equivalent STI24N60M2 ST Micro
Pricing & Availability
20096 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic