Power Field-Effect Transistors Active Decline

STB24N60DM2

Manufacturer: ST Micro

Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: N-CHANNEL 600 V, 0.175 OHM TYP, 18 A FDMESH II PLUS LOW QG POWER MOSFET IN D2PAK PACKAGE
Part Number: STB24N60DM2
Generic: STB24N60
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: December 2000
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies STB24N60DM2, sourced from ST MICROELECTRONICS. Inventory shown on this page reflects quantity on hand when available: 8093 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
Functional Equivalent STB24N60M6 ST Micro
Functional Equivalent STI24NM60N ST Micro
Functional Equivalent STP24N60M2 ST Micro
Functional Equivalent STP24NM60N ST Micro
Functional Equivalent TK17E65W Toshiba
Functional Equivalent TK17V65W Toshiba
Pricing & Availability
8093 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

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