Power Field-Effect Transistors Active Mature

STP24NM60N

Manufacturer: ST Micro

Power Field-Effect Transistor

Manufacturer Description: 600 V, 17 A, 0.168 OHM, TO-220FP N-CHANNEL MDMESH II POWER MOSFET
Part Number: STP24NM60N
Generic: STP24NM60
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2011
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies STP24NM60N, sourced from ST MICROELECTRONICS. Inventory shown on this page reflects quantity on hand when available: 405 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
Functional Equivalent STB24N60DM2 ST Micro
Functional Equivalent STB24N60M6 ST Micro
Functional Equivalent STI24NM60N ST Micro
Functional Equivalent STP24N60M2 ST Micro
Functional Equivalent TK17E65W Toshiba
Functional Equivalent TK17V65W Toshiba
Pricing & Availability
405 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic