Power Field-Effect Transistors Active Mature

STU2N80K5

Manufacturer: ST Micro

Power Field-Effect Transistor, 2A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Manufacturer Description: N-channel 800 V, 3.5 OHM typ., 2 A Mdmesh M5 Power MOSFET
Part Number: STU2N80K5
Generic: STU2N80
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: February 2014
Lifecycle Stage: Mature

Package Information
Package Style: IN-LINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies STU2N80K5, sourced from ST MICROELECTRONICS. Inventory shown on this page reflects quantity on hand when available: 23918 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
Functional Equivalent STP2N80K5 ST Micro
Pricing & Availability
23918 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic