Power Field-Effect Transistors Active Decline

STP18N60M2

Manufacturer: ST Micro

Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Manufacturer Description: N-channel 600 V, 255 milli ohm typ., 13 A MDmesh M2 Power MOSFET
Part Number: STP18N60M2
Generic: STP18N60
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: June 2013
Lifecycle Stage: Decline
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IXKH13N60C5 Littelfuse
Functional Equivalent IXKP13N60C5 Littelfuse
Functional Equivalent SIHD14N60E-GE3 Vishay
Functional Equivalent SIHH14N65EF-T1-GE3 Vishay
Functional Equivalent STB18N60M2 ST Micro
Functional Equivalent STW18N60M2 ST Micro
Functional Equivalent TK14E65W5 Toshiba
Functional Equivalent TK14G65W5 Toshiba
Functional Equivalent TK14N65W5 Toshiba
Functional Equivalent TK14V65W Toshiba
Pricing & Availability
5469 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

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