Power Field-Effect Transistors Active Mature

STF10N65K3

Manufacturer: ST Micro

Power Field-Effect Transistor

Manufacturer Description: N channel 650 VOLT 0.75OHM 10 AMPERE MDmesh K3 Power MOSFET in a TO-220FP package
Part Number: STF10N65K3
Generic: STB10N65
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2009
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent R6007ENX Rohm
Functional Equivalent SIHF6N65E-GE3 Vishay
Functional Equivalent SSF7NS60F Good Ark
Functional Equivalent STF12N65M5 ST Micro
Functional Equivalent STF14NM50N ST Micro
Functional Equivalent STF18NM60N ST Micro
Functional Equivalent STF18NM80 ST Micro
Functional Equivalent STF21N65M5 ST Micro
Functional Equivalent STF5N95K3 ST Micro
Functional Equivalent STF8N65M5 ST Micro
Functional Equivalent TK7A60W Toshiba
Functional Equivalent TK7A60W5 Toshiba
Pricing & Availability
980 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic