Power Field-Effect Transistors Discontinued

STB23NM60ND

Manufacturer: ST Micro

Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: 600 V, 19.5 A, 0.150 OHM, D2PAK, FDMESH II (WITH FAST DIODE) N-CHANNEL POWER MOSFET
Part Number: STB23NM60ND
Generic: STB23NM60
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 2008
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates FCB20N60 Onsemi
Functional Equivalent FCB20N60 Onsemi
FFF Alternates FCB20N60FTM Onsemi
Functional Equivalent FCB20N60FTM Onsemi
FFF Alternates FCB20N60TM Onsemi
Functional Equivalent FCB20N60TM Onsemi
Functional Equivalent STB26NM60N ST Micro
Functional Equivalent STB28N60DM2 ST Micro
Manufacturer Suggested STB28N60DM2 ST Micro
Manufacturer Suggested STB33N60DM6 ST Micro
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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