Power Field-Effect Transistors Active-Unconfirmed Decline

IRF451

Manufacturer: ST Micro

Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Manufacturer Description: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Part Number: IRF451
Generic: IRF451
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 1988
Lifecycle Stage: Decline

Package Information
Package Style: FLANGE MOUNT
Terminals: 2

Compliance & Certifications
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates 2N6770 TT Electronics
FFF Alternates 2N6770 Infineon
Functional Equivalent 2N6770 TT Electronics
Functional Equivalent 2N6770 Infineon
FFF Alternates 2N6770R1 TT Electronics
Functional Equivalent 2N6770R1 TT Electronics
FFF Alternates IRF450 Infineon
Functional Equivalent IRF450 Infineon
Functional Equivalent JAN2N6770 DLA
FFF Alternates JANTX2N6770 Infineon
Functional Equivalent JANTX2N6770 DLA
Functional Equivalent JANTX2N6770 Infineon
FFF Alternates JANTXV2N6770 Infineon
Functional Equivalent JANTXV2N6770 DLA
Functional Equivalent JANTXV2N6770 Infineon
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: High
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic