RF Power Field-Effect Transistors Discontinued

NE5511279A

Manufacturer: Renesas

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Part Number: NE5511279A
Generic: NE5511279
CAGE Code: 6LTM0, 34371, 8QEK4, 4MHN3, JA033
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2003
Lifecycle Stage: Discontinued
Package Information
Package Style: MICROWAVE
Terminals: 4
Compliance & Certifications
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: High
  • Environmental: High

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