RF Power Field-Effect Transistors Active Mature

TGF2977-SM

Manufacturer: Qorvo

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Nitride, N-Channel, High Electron Mobility FET

Manufacturer Description: DC-12 GHz, 32 V, 5 W GaN RF Transistor
Part Number: TGF2977-SM
Generic: TGF2977
CAGE Code: 3EAG2, 1FA49, 7AHC2, 1CVM1, 0KY01
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2015
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 16
Operating Temperature: -40.0°C to 85.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

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