RF Power Field-Effect Transistors Active Mature

T2G6000528-Q3

Manufacturer: Qorvo

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

Manufacturer Description: GAN RF POWER TRANSISTOR
Part Number: T2G6000528-Q3
Generic: T2
CAGE Code: 3EAG2, 1FA49, 7AHC2, 1CVM1, 0KY01
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: April 2013
Lifecycle Stage: Mature
Package Information
Package Style: FLATPACK
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low-Med

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