Power Field-Effect Transistors Active Mature

NTH4L070N120M3S

Manufacturer: Onsemi

Power Field-Effect Transistor, 34A I(D), 1200V, 0.087ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Manufacturer Description: SILICON CARBIDE (SIC) MOSFET
Part Number: NTH4L070N120M3S
Generic: NTH4L070
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: March 2023
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies NTH4L070N120M3S from ON SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 4508 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies.

Type Part Number Manufacturer
Functional Equivalent GP2T080A120X Micross
Functional Equivalent IMW120R060M1H Infineon
Functional Equivalent IMW120R060M1HXKSA1 Infineon
Functional Equivalent IMZ120R060M1H Infineon
FFF Alternates NVH4L070N120M3S Onsemi
Functional Equivalent NVH4L070N120M3S Onsemi
Pricing & Availability
4508 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

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