Power Field-Effect Transistors Active Mature

IMW120R060M1HXKSA1

Manufacturer: Infineon

Power Field-Effect Transistor, 36A I(D), 1200V, 0.106ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Manufacturer Description: COOLSIC 1200V SIC TRENCH MOSFET SILICON CARBIDE MOSFET
Part Number: IMW120R060M1HXKSA1
Generic: IMW120R060
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: December 2020
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies IMW120R060M1HXKSA1 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 989 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.

Type Part Number Manufacturer
Functional Equivalent GP2T080A120X Micross
FFF Alternates IMW120R060M1H Infineon
Functional Equivalent IMW120R060M1H Infineon
Functional Equivalent IMZ120R060M1H Infineon
Functional Equivalent NTH4L070N120M3S Onsemi
Functional Equivalent NVH4L070N120M3S Onsemi
Pricing & Availability
989 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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