Power Field-Effect Transistors Discontinued

MMDF3N02HDR2

Manufacturer: Onsemi

Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 3 AMPS, 20 VOLTS N-CHANNEL SO-8, DUAL POWER MOSFET
Part Number: MMDF3N02HDR2
Generic: MMDF3N02
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
NSN: 5961-01-578-1534
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 1994
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent FDS4935A Onsemi
Functional Equivalent FDS6975 Onsemi
Functional Equivalent FY3ABJ-03 Renesas
Functional Equivalent FY5ACH-03A Renesas
Functional Equivalent HAT1047R Renesas
Functional Equivalent HAT1047RJ Renesas
Functional Equivalent HAT1055R Renesas
Functional Equivalent HAT1055RJ Renesas
Functional Equivalent IRF7303 Infineon
Manufacturer Suggested MMDF3N02HDR2G Onsemi
Functional Equivalent NTMD4N03R2G Onsemi
Functional Equivalent RRH090P03TB Rohm
Pricing & Availability
30024 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: High
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details