NTMD4N03R2G
Manufacturer: Onsemi
Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | NTMD4N03R2G |
|---|---|
| Generic: | NTMD4N03 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | February 2003 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies NTMD4N03R2G, sourced from ON SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 20552 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD17571Q2
|
TI |
| Functional Equivalent |
FDS4935A
|
Onsemi |
| Functional Equivalent |
FDS6975
|
Onsemi |
| Functional Equivalent |
FY3ABJ-03
|
Renesas |
| Functional Equivalent |
FY5ACH-03A
|
Renesas |
| Functional Equivalent |
HAT1047R
|
Renesas |
| Functional Equivalent |
HAT1047RJ
|
Renesas |
| Functional Equivalent |
HAT1055R
|
Renesas |
| Functional Equivalent |
HAT1055RJ
|
Renesas |
| Functional Equivalent |
IRF7303
|
Infineon |
| Functional Equivalent |
RRH090P03TB
|
Rohm |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Low
- Supply Chain: Low-Med
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic