Power Bipolar Transistors Active Decline

MJD47G

Manufacturer: Onsemi

Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Manufacturer Description: HIGH VOLTAGE POWER TRANSISTOR
Part Number: MJD47G
Generic: MJD47
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 1995
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates MJD47T4G Onsemi
Functional Equivalent MJD47T4G Onsemi
Pricing & Availability
5018 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

Related Products

1075A

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon

Microsemi

View Details
1DI200Z-120

Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

View Details
1DI300M-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

Fuji Elec

View Details
1DI300Z-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

View Details