Insulated Gate Bipolar Transistors Active Mature

HGTD1N120BNS9A

Manufacturer: Onsemi

Insulated Gate Bipolar Transistor, 5.3A I(C), 1200V V(BR)CES, N-Channel, TO-252AA

Manufacturer Description: 5.3A, 1200V, NPT SERIES N-CHANNEL IGBT
Part Number: HGTD1N120BNS9A
Generic: HGTD1N120
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: March 2001
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
73389 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

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