FQD19N10LTM
Manufacturer: Onsemi
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
| Part Number: | FQD19N10LTM |
|---|---|
| Generic: | FQD19N10 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | October 2000 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies FQD19N10LTM from ON SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 10164 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies.
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD19538Q2
|
TI |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med
Need help? Email sales or call (800) 701-8152.
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