Power Field-Effect Transistors NRFND Decline

FDS8984

Manufacturer: Onsemi

Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Manufacturer Description: MOSFET - N-Channel, POWERTRENCH
Part Number: FDS8984
Generic: FDS8984
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 2006
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested CSD17571Q2 TI
FFF Alternates DMN3033LSD-13 Diodes
Functional Equivalent DMN3033LSD-13 Diodes
FFF Alternates DMN3033LSDQ-13 Diodes
Functional Equivalent DMN3033LSDQ-13 Diodes
Functional Equivalent SSG4920N Secos
Functional Equivalent SSG4920N-C Secos
Pricing & Availability
77141 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Low-Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip